UNDOPED AMORPHOUS SILICON TFTs WITH n-CHANNEL OR p-CHANNEL DEVICE OPERATION FOR THE DETERMINATION OF THE GAP STATES DISTRIBUTION
- Author(s):
- Publication title:
- Amorphous silicon semiconductors -- Pure and hydrogenated : symposium held April 21-24, 1987, Anaheim, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 95
- Pub. Year:
- 1987
- Page(from):
- 489
- Page(to):
- 496
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837623 [0931837626]
- Language:
- English
- Call no.:
- M23500/95
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
THE MEYER-NELDEL RELATION AND ANALYSIS OF THE FIELD-EFFECT IN AMORPHOUS SILICON
Materials Research Society |
Materials Research Society |
Materials Research Society |
Electrochemical Society |
3
Conference Proceedings
AMORPHOUS SILICON THIN-FILM TRANSISTORS WITH NON-UNIFORM DISTRIBUTION OF GAP STATES
Materials Research Society |
9
Conference Proceedings
Transient Photoconductivity Study of the Distribution of Gap States in 100℃ VHF-deposited Hydrogenated Silicon Layers
Materials Research Society |
SPIE-The International Society for Optical Engineering, Narosa |
10
Conference Proceedings
Picosecond vibrational dynamics and stability of deuterated amorphous silicon thin films
SPIE - The International Society of Optical Engineering |
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
12
Conference Proceedings
SURFACE AND BULK GAP STATES DISTRIBUTIONS IN AMORPHOUS SILICON FILMS AS OBTAINED BY OPTICAL METHODS
Materials Research Society |