Blank Cover Image

OPTICAL, CHEMICAL AND ELECTRICAL CHARACTERIZATION OF ION-ETCHED GALLIUM ARSENIDE SURFACES

Author(s):
Feng, G. F.
Holtz, M.
Zallen, R.
Epp. J. M.
Dillard, J. G.
Cole, E.
Johnson, P.
Sen, S.
Burton, L. C.
4 more
Publication title:
Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
93
Pub. Year:
1987
Page(from):
381
Page(to):
384
Pages:
4
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837609 [093183760X]
Language:
English
Call no.:
M23500/93
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings CHARACTERISTICS OF Si-IMPLANTED (211) VERSUS (100) GaAS

Epp, J., Dillard, J.G., Siochi, A., Zallen, R., Cole, E.D., Sen, S., Vaseashta, A., Burton, L.C.

Materials Research Society
7 Conference Proceedings BURIED AMORPHOUS LAYER IN GALLIUM ARSENIDE

Sengupta, D., Ridgway, M.C., Zemanski, J.M., Johnson, S.T.

Materials Research Society
2 Conference Proceedings CAPACITANCE SPECTROSCOPY OF SCHOTTKY DIODES FORMED ON ION-ETCHED GaAs

Sen, S., Cole, E. D., Burton, L. C.

Materials Research Society
8 Conference Proceedings Optical and Electrical Characterization Study of SiCl4 Reactive-Io-Etched GaAs

Murtagh, M., Ye, Shu-Ren, Masterson, H. J., Beechinor, J. T., Crean, G. M., Auret, F. D., Deenapanray, P. N. K., Mayer, …

MRS - Materials Research Society
3 Conference Proceedings ELECTRICAL MODELLING OF ION-DAMAGED GaAs SCHOTTKY BARRIER INTERFACES

Cole, E.D., Sen, S., Burton, L.C.

Materials Research Society
9 Conference Proceedings Non-Crystallographic Wet Etching of Gallium Arsenide

Baca, A.G., Laroche, J.R., Chang, P.C., Ren, F.

Electrochemical Society
4 Conference Proceedings Annealing Effects at the Near-Surface Region of Gallium Arsenide

Evans,H.E., Smith,D.L., Rice-Evans,P.C., Gledhill,G.A., Moore,A.M.

Trans Tech Publications
10 Conference Proceedings ASSESSMENT OF SURFACE DAMAGE OF GALLIUM ARSENIDE DUE TO REACTIVE ION ETCHING

Puttock, M. S., Thomas, H., Morgan, D. V., Rossow, U., Zahn, D. R. T., Richter, W., Hilton, K. P., Woodward, J.

Materials Research Society
5 Conference Proceedings SURFACE AND INTERFACE DAMAGE CHARACTERIZATION OF REACTIVE ION ETCHED MBE REGROWN GaAs

Cole, M.W., Dutta, M., Rossabi, J., Smith, D.D., Lehman, J.L.

Materials Research Society
11 Conference Proceedings INTERBAND OPTICAL PROPERTIES OF THE MICROCRYSTALLINE COMPONENT WITHIN THE DAMAGE LAYER OF Be+-IMPLANTED GaAs

Feng, G.F., Zallen, R.

Materials Research Society
6 Conference Proceedings GROWTH OF GALLIUM ARSENIDE ON SILICON IN MASKED, ETCHED TRENCHES

Adkisson, J.W., Kamins, T.I., Koch, G.M., Harris, Jr., J.S., Rosner, S.J., Nauka, K., Reid, G.A.

Materials Research Society
12 Conference Proceedings Chemical etch effects on laser-induced surface damage growth in fused silica

Hrubesh,L.W., Norton,M.A., Molander,W.A., Wegner,P.J., Staggs,M.C., Demos,S.G., Britten,J.A., Summers,L.J., …

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12