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DEFECTS ANNEALING OF Si+ IMPLANTED GaAs AT RT AND 100°C

Author(s):
Publication title:
Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
93
Pub. Year:
1987
Page(from):
67
Page(to):
72
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837609 [093183760X]
Language:
English
Call no.:
M23500/93
Type:
Conference Proceedings

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