ENCHANGE RATE OF SiO2 GROWTH IN GE-IMPLANTED Si
- Author(s):
- Publication title:
- Materials modification and growth using Ion beams : symposium held April 21-23, 1987, Anaheim, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 93
- Pub. Year:
- 1987
- Page(from):
- 27
- Page(to):
- 34
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837609 [093183760X]
- Language:
- English
- Call no.:
- M23500/93
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Vibrational and Electronic Transition in InAs Quantum Dots Formed by Sequential Implantation of In and As in a-SiO2
MRS - Materials Research Society |
Materials Research Society |
North-Holland |
MRS - Materials Research Society |
9
Conference Proceedings
ENHANCEMENT OF LATERAL SOLID PHASE EPITAXIAL GROWTH OF Si ON SiO2 WITH 31P IMPLANTATION
Materials Research Society |
4
Conference Proceedings
Synthesis and Properties of GaAs Nanocrystals in SiO2 Formed by Ion Implantation
MRS - Materials Research Society |
10
Conference Proceedings
*DAMAGE GROWTH IN Si DURING SELF-ION IRRADIATION: A STUDY OF ION EFFECTS OEVER AN EXTENDED ENERGY RANGE
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |