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ELECTRICAL PROPERTIES OF n- AND p-TYPE In0.53Ga0.47 As LAYERS FORMED BY ION IMPLANTATION AND RAPID THERMAL (FLASH) ANNEAL

Author(s):
L:iu, S. G.
Narayan, S. Y.
Magee, C. W.
Wu, C. P.
Kolondra, F.
Paczkowski, J.
Capewell, D.
2 more
Publication title:
Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
92
Pub. date:
1987
Page(from):
375
Page(to):
380
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837593 [0931837596]
Language:
English
Call no.:
M23500/92
Type:
Conference Proceedings

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