POINT DEFECT EVOLUTION DURING RAPID THERMAL ANNEALING OF Si+-IMPLANTED GaAs

POINT DEFECT EVOLUTION DURING RAPID THERMAL ANNEALING OF Si+-IMPLANTED GaAs

Author(s):

Publication title:

Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

92

Pub. Year:

1987

Page(from):

353

Page(to):

360

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837593 [0931837596]

Language:

English

Call no.:

M23500/92

Type:

Conference Proceedings

Details

TDL ID:	ZA00015578
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rapid thermal processing of electronic materials
Conf. info. (Number):	1987
Conf. info. (Venue):	Anaheim, CA, USA
Conf. info. (Date):	1987.04.21-1987.04.23

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