LIMITED REACTION PROCESSING: GROWTH OF III-V EPITAXIAL LAYERS BY RAPID THERMAL METALORGANIC CHEMICAL VAPOR DEPOSITION

LIMITED REACTION PROCESSING: GROWTH OF III-V EPITAXIAL LAYERS BY RAPID THERMAL METALORGANIC CHEMICAL VAPOR DEPOSITION

Author(s):

Publication title:

Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

92

Pub. Year:

1987

Page(from):

305

Page(to):

310

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837593 [0931837596]

Language:

English

Call no.:

M23500/92

Type:

Conference Proceedings

Details

TDL ID:	ZA00015578
Series ID:	PA00000011
Conf. info. (Name):	Symposium on rapid thermal processing of electronic materials
Conf. info. (Number):	1987
Conf. info. (Venue):	Anaheim, CA, USA
Conf. info. (Date):	1987.04.21-1987.04.23

Similar Items:

1 Conference Proceedings *LIMITED REACTION PROCESSING Gibbons, James F., Gronet, C.M., Sturm, J.C., King, C., Williams, K., Wilson, S., Reynolds, S., Vook, D., Scott, M., … Materials Research Society	7 Conference Proceedings GROWTH OF GeSi/Si STRAINED-LAYER SUPERLATTICES USING LIMITED REACTION PROCESSING Gronet, C.M., King, C.A., Gibbons, J.F. Materials Research Society
2 Conference Proceedings *LIMITED REACTION PROCESSING: SILICON AND III-V MATERIALS Gibbons, James F., Reynolds, S, Gronet, C., Vook, D., King, C., Opyd, W, Wilson S., Nauka, C., Reid, G, Hull, R. Materials Research Society	8 Conference Proceedings Pendeo-epitaxial growth GaN on SiC and silicon substrates via metalorganic chemical vapor deposition Linthicum, K. J., Gehrke, T., Thomson, D., Ronning, C., Carlson, E. P., Zorman, C. A., Mehregany, M., Davis, R. F. MRS-Materials Research Society
3 Conference Proceedings RAPID THERMAL CHEMICAL VAPOR DEPOSITION: SELECTIVE EPITAXIAL SILICON GROWTH (SEG) Osenback, J. W., Ku, Y. H., Kermani, A. Materials Research Society	9 Conference Proceedings DOPANT ENHANCED LOW-TEMPERATURE EPITAXIAL GROWTH BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION Hsieh, T.Y., Jung, K.H., Kwong, D.L. Materials Research Society
4 Conference Proceedings THE EFFECT OF OXYGEN ON THE THERMAL STABILITY OF Si1-x Gex STRAINED LAYERS GROWN BY LIMITED REACTION PROCESSING Nobel, D.B., Hoyt, J.L., Kuo, P., Nix, W.D., Gibbons, J.F., Laderman, S.S., Turner, J.E., Rosner, S.J., Scott, M.P. Materials Research Society	10 Conference Proceedings *APPLICATIONS OF RAPID THERMAL PROCESSING Gibbons, J. F., Bodkin, D. M., Grenier, M. E., Hoyt, J. L., Opyd, W. G. North-Holland
5 Conference Proceedings *EPITAXIAL GROWTH OF Si1-XGeX/Si HETEROSTRUCTURES BY LIMITED REACTION PROCESSING FOR MINORITY CARRIER DEVICE APPLICATIONS King, C. A., Hoyt, J. L., Noble, D. B, Gronet, C. M., Gibbons, J. F., Scott, M. P., Laderman, S. S., Kamains, T. I., … Materials Research Society	11 Conference Proceedings RAPID CHEMICAL VAPOR DEPOSITION OF YBa2Cu3Ox COATINGS Lackey, W.J., Carter, W.B, Hill, D.N., Barefield, E.K., Hanigofski, J.A., Shaprio, M.J., Moss, III., T.S., Green, A.J., … Materials Research Society
6 Conference Proceedings Si AND GeSi1-x EPITAXIAL GROWTH ON SOI STRUCTURES BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION Hseih, T. Y., Jung, K. H., Kwong, D. L., Lin, S., Marcus, H. L. Materials Research Society	12 Conference Proceedings Rapid Thermal Chemical Vapor Deposition of epitaxial Si and SiGe Boer de B. W. Kluwer Academic Publishers

1

2

3

4

5

6

7

8

9

10

11

12