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PROPERTIES OF HIGH DOSE LOW TEMPERATURE RAPID THERMALLY ANNEALED GALLIUM IMPLANTED SILICON

Author(s):
Publication title:
Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
92
Pub. Year:
1987
Page(from):
21
Page(to):
26
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837593 [0931837596]
Language:
English
Call no.:
M23500/92
Type:
Conference Proceedings

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