RESIDUAL STRESS IN GaAs LAYER GROWN ON 4°-OFF (100)Si BY MBE

RESIDUAL STRESS IN GaAs LAYER GROWN ON 4°-OFF (100)Si BY MBE

Author(s):

Yao, T.

Publication title:

Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

91

Pub. Year:

1987

Page(from):

63

Page(to):

68

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837586 [0931837588]

Language:

English

Call no.:

M23500/91

Type:

Conference Proceedings

Details

TDL ID:	ZA00015577
Series ID:	PA00000011
Conf. info. (Name):	Symposium on heteroepitaxy on silicon
Conf. info. (Number):	2nd
Conf. info. (Venue):	Anaheim, CA, USA
Conf. info. (Date):	1987.04.21-1987.04.23

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