Blank Cover Image

THE DIFFUSION OF PHOSPHORUS AND INDIUM INTO GALLIUM ARSENIDE FROM POLYCRYSTALLINE-SILICON

Author(s):
Publication title:
Interfaces, superlattices, and thin films : symposium held December 1-6, 1986, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
77
Pub. Year:
1987
Page(from):
785
Page(to):
790
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837562 [0931837561]
Language:
English
Call no.:
M23500/77
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings VACANCY DIFFUSION AT POLYSILICON ENCAPSULATED GaAs SURFACES

Kavanagh, K. L., Magee, C. W., Sheets, J.

Materials Research Society
7 Conference Proceedings Modeling dopant diffusion in Gallium arsenide

Deal, M. D., Hu, C. J., Lee, C. C., Robinson, H. G.

MRS - Materials Research Society
2 Conference Proceedings GROWTH OF GALLIUM ARSENIDE ON SILICON IN MASKED, ETCHED TRENCHES

Adkisson, J.W., Kamins, T.I., Koch, G.M., Harris, Jr., J.S., Rosner, S.J., Nauka, K., Reid, G.A.

Materials Research Society
8 Conference Proceedings GROWTH AND CHARACTERIZATION OF InXGa1-XP (x-0.38) ON GaP(100) WITH A LINEARLY GRADED BUFFER LAYER BY GAS-SOURCE MOLECULAR BEAM EPITAXY

Chin, T.P., Chang, J.C.P., Kavanagh, K.L., Tu, C.W., Kirchner, P.D., Woodall, J.M.

Materials Research Society
3 Conference Proceedings Diffusion of arsenic and phosphorus in laser-processed-polycrystalline-silicon-thin-films

Baumgart, H., Leamy, H.J., Trimble, L.E., Doherty, C.J., Celler, G.K.

North-Holland
9 Conference Proceedings Indium gallium arsenide photodiode arrays for optical communications

Cohen,M.J., Brubaker,R.M., Dries,J.C., Ettenberg,M.H.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings PHOSPHORUS DIFFUSION IN POLYCRYSTALLINE SILICON: MONTE CARLO SIMULATION OF EXPERIMENTAL DIFFUSION PROFILES

Lavine, J. P., Lee, S. -T., Black, D. L., Losee, D. L., Jarman, C. M.

Materials Research Society
10 Conference Proceedings ENCHANCED DIFFUSION OF PHOSPHORUS AT GRAIN BOUNDARIES IN SILICON

Cheng, L. J., Shyu, C. M., Stika, K. M.

North-Holland
5 Conference Proceedings Effect of Ion Enery and Dose on the Diffusion of Silicon Implanted into Gallium Arsenide

C. C. Lee, M. D. Deal, J. C. Bravman

Electrochemical Society
11 Conference Proceedings CHRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY PULSED ION BEAM ANNEALING

Gyulai, J., Fastow, R., Kavanagh, K., Thompson, M. O., Palmstrom, C. J., Hewett, C. A., Mayer, J, W,

North-Holland
6 Conference Proceedings New traps for H｡?in boron- and phosphorus-doped silicon

Korpas,L., Corbett,J.W., Estreicher,S.K.

Trans Tech Publications
12 Conference Proceedings PROPERTIES OF PATTERNED GALLIUM ARSENIDE ON SILICON

Matyi, R.J., Shichijo, H., Kim, T.S., Tsai, H.L.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12