THE COMPETITION BETWEEN ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION AND AMORPHIZATION IN SILICON: THE ROLE OF THE DIVACANCY

THE COMPETITION BETWEEN ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION AND AMORPHIZATION IN SILICON: THE ROLE OF THE DIVACANCY

Author(s):

Publication title:

Beam-solid interactions and transient processes : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

74

Pub. Year:

1987

Page(from):

477

Page(to):

480

Pages:

4

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837401 [0931837405]

Language:

English

Call no.:

M23500/74

Type:

Conference Proceedings

Details

TDL ID:	ZA00015559
Series ID:	PA00000011
Conf. info. (Name):	Symposium on beam-solid interactions and transient processes
Conf. info. (Number):	1986
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1986.12.01-1986.12.04

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