FORMATION OF STABLE POINT DEFECTS IN ION-IMPLANTED Si
- Author(s):
- Publication title:
- Beam-solid interactions and transient processes : symposium held December 1-4, 1986, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 74
- Pub. Year:
- 1987
- Page(from):
- 391
- Page(to):
- 398
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837401 [0931837405]
- Language:
- English
- Call no.:
- M23500/74
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
CHARACTERIZATION OF ION-IMPLANTED ALUMINUM AND IRON BY SPECTROSCOPIC ELLIPSOMETRY
Materials Research Society |
Materials Research Society |
8
Conference Proceedings
COHERENT PRECIPITATE FORMATION IN PULSED-LASER AND THERMALLY ANNEALED, ION-IMPLANTED Si
North-Holland |
Materials Research Society |
Materials Research Society |
4
Conference Proceedings
PRECIPITATION, PHASE TRANSFORMATION, AND ENHANCED DIFFUSION IN ION-IMPLANTED SILICON
Materials Research Society |
10
Conference Proceedings
DIFFUSION, SEGREGATION, AND RECRYSTALLIZATION IN HIGH-DOSE ION-IMPLANTED Si
Materials Research Society |
5
Conference Proceedings
TRANSIENT ENHANCED DIFFUSION AND GETTERING OF DOPANTS IN ION IMPLANTED SILICON
Materials Research Society |
Materials Research Society |
6
Conference Proceedings
HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON
Materials Research Society |
Materials Research Society |