GROWTH OF GeSi/Si STRAINED-LAYER SUPERLATTICES USING LIMITED REACTION PROCESSING

GROWTH OF GeSi/Si STRAINED-LAYER SUPERLATTICES USING LIMITED REACTION PROCESSING

Author(s):

Publication title:

Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

71

Pub. Year:

1986

Page(from):

107

Page(to):

112

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837371 [0931837375]

Language:

English

Call no.:

M23500/71

Type:

Conference Proceedings

Details

TDL ID:	ZA00015557
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials issues in silicon integrated circuit processing
Conf. info. (Number):	1986
Conf. info. (Venue):	Palo Alto, CA, USA
Conf. info. (Date):	1986.04.15-1986.04.18

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