APPLICATION OF THE SILICON INTERSTITIAL BASED INTRINSIC GETTERING PROCESS TO THE FORMATION OF MULTILEVEL DEFECT STRUCTURES
- Author(s):
- Nauka, K.
- Publication title:
- Materials issues in silicon integrated circuit processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 71
- Pub. Year:
- 1986
- Page(from):
- 27
- Page(to):
- 32
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837371 [0931837375]
- Language:
- English
- Call no.:
- M23500/71
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
ON THE MECHANISM OF INTRINSIC GETTERING BY BUTTERFLY-TYPE DEFECTS IN SILICON
Materials Research Society |
7
Conference Proceedings
EFFECTIVE INTRINSIC GETTERING OF COPPER DURNG A SUB-QUARTER MICRON CMOS PROCESS
Electrochemical Society |
2
Conference Proceedings
NATURE AND GENERATION MECHANISM OF BUTTERFLY-TYPE INTRINSIC GETTERING CENTERS IN OXYGEN-FREE SILICON CRYSTALS.
Trans Tech Publications |
8
Conference Proceedings
EFFECTIVE INTRINSIC GETTERING OF COPPER DURNG A SUB-QUARTER MICRON CMOS PROCESS
Electrochemical Society |
Materials Research Society |
MRS - Materials Research Society |
North Holland |
MRS - Materials Research Society |
Materials Research Society |
North-Holland |
MRS - Materials Research Society |
12
Conference Proceedings
MICROSCOPIC ANALYSIS OF THE BEHAVIOR OF INTERSTITIAL AND PRECIPITATED OXYGEN DURING INTRINSIC GETTERING IN Si
Materials Research Society |