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CAPACITANCE-VOLTAGE CHARACTERISTICS OF METALLIC GATE/OXIDE/a-Si:H MOS STRUCTURES

Author(s):
Publication title:
Materials issues in amorphous-semiconductor technology : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
70
Pub. date:
1986
Page(from):
167
Page(to):
172
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837364 [0931837367]
Language:
English
Call no.:
M23500/70
Type:
Conference Proceedings

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