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*DEEP LEVEL TRANSIENT SPECTROCOPY: DEFECT CHARACTERIZATION IN SEMICONDUCTOR DEVICES

Author(s):
Johnson, N.M.  
Publication title:
Materials characterization : symposium held April 15-17, 1986, Palo Alto California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
69
Pub. Year:
1986
Page(from):
75
Page(to):
94
Pages:
20
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837357 [0931837359]
Language:
English
Call no.:
M23500/69
Type:
Conference Proceedings

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