OXYGEN PRECIPITATION IN SILICON: NUMERICAL MODELS
- Author(s):
- Publication title:
- Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 59
- Pub. Year:
- 1986
- Page(from):
- 301
- Page(to):
- 308
- Pages:
- 8
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837241 [0931837243]
- Language:
- English
- Call no.:
- M23500/59
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Oxygen Precipitation Behaviour in 300 mm Polished Czochralski Silicon Wafers
Electrochemical Society |
Materials Research Society |
8
Conference Proceedings
Shape-based recognition of targets in synthetic aperture radar images using elliptical Fourier descriptors
Society of Photo-optical Instrumentation Engineers |
Materials Research Society |
Materials Research Society |
Materials Research Society |
North-Holland |
5
Conference Proceedings
OXYGEN PRECIPITATION IN SILICON - ITS EFFECTS ON MINORITY CARRIER RECOMBINATION AND GENERATION LIFETIME
North-Holland |
11
Conference Proceedings
*THE MEASUREMENT OF BORON AT SILICON WAFER SURFACES BY NEUTRON DEPTH PROFILING
Materials Research Society |
6
Conference Proceedings
On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon
MRS - Materials Research Society |
Trans Tech Publications |