DIRECT OBSERVATION OF INTERFACE TRAPS IN OMVPE-GROWTH SELECTIVELY DOPED A1GaAs/GaAs HETEROSTRUCTURE USING MODIFIED DLTS

DIRECT OBSERVATION OF INTERFACE TRAPS IN OMVPE-GROWTH SELECTIVELY DOPED A1GaAs/GaAs HETEROSTRUCTURE USING MODIFIED DLTS

Author(s):

Publication title:

Layered structures and epitaxy : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

56

Pub. Year:

1985

Page(from):

295

Page(to):

300

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837210 [0931837219]

Language:

English

Call no.:

M23500/56

Type:

Conference Proceedings

Details

TDL ID:	ZA00015542
Series ID:	PA00000011
Conf. info. (Name):	Symposium on layered structures and epitaxy
Conf. info. (Number):	1985
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1985.12.02-1985.12.04

Similar Items:

1 Conference Proceedings Photoionization of Deep Traps in AlGaAs/GaAs Quantum Wells Takikawa,M., Kelting,K., Brunthaler,G., Takechi,M., Komeno,J. Trans Tech Publications	7 Conference Proceedings INTERFACE RECOMBINATION VELOCITIES IN LAYERED GaAs AND AlGaAs/GaAs STRUCTURES GROWN BY OMVPE Bothra, S., Venkatasubramanian, R., Gandhi, S. K., Borrego, J. M. Materials Research Society
2 Conference Proceedings SELECTIVE GROWTH OF GaAs AND AlXGa1-XAs BY OMVPE USING TERTIARYBUTYLARSINE Tokuda, K.L., Kisker, D.W., Lamont-Schnoes, M., Lopata, J. Materials Research Society	8 Conference Proceedings GROWTH AND CHARACTERIZATION OF GaAs-BASED HETEROSTRUCTURES ON Si BY MOCVD Hobson, W.S., Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M., Jacobson, D.C., Abernathy, C.R., Caruso, R. Materials Research Society
3 Conference Proceedings Characterisation of GaAs/AlGaAs heterostructures grown by OMVPE using trimethylamine alane as a new alu-minum source Hobson,W.S., McAfee,S.R., Jones,K.S., Paroskevopoulos,N.C., Abernathy,C.R., Sputz,S.K., Harris,T.D., Schnoes,M.Lamont, … Trans Tech Publications	9 Conference Proceedings ACTIVATION AND INTERDIFFUSION CHARACTERISTICS IN IMPLANTED GaAs-A1GaAs HETEROSTRUCTURES ON Si Pearton, S.J., Short, K.T., Jones, K.S., Vernon, S.M. Materials Research Society
4 Conference Proceedings COMPREHENSIVE INVESTIGATION OF TRAPS IN GaAs/A1GaAs HETEROSTRUCTURES AND SUPERLATTICES IN DLTS Papaioannou, G., Kiriakidis, G., Georgakilas, A., Christou, A. Materials Research Society	10 Conference Proceedings HIGH 2DEG MOBILITY AND FABRICATION OF HIGH PERFORMANCE A1GaAs/GaAs SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTORS AND RING OSCILLATORS ON Si SUBSTRATES Chand, Naresh, Ren, F., Van der Ziel, J. P., Chen, Y. K. Materials Research Society
5 Conference Proceedings EFFECTS OF GROWTH CONDITIONS ON EL2 CONCENTRATION IN OMVPE-GaAs Venkatasubramanian, R., Lee, W. I., Ghanhdi, S. K., Borrego, J. M. Materials Research Society	11 Conference Proceedings Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy Sarid,D., Yao,X., Workman,R.K., Peterson,C.A., Fallahi,M. SPIE-The International Society for Optical Engineering
6 Conference Proceedings OMVPE GROWTH AND CHARACTERIZATION OF GaAs ON Si FOR DEVICE APPLICATIONS Shastry, S.K., Zemon, S., Armiento, C., Stern, M.B., Levinson, M., Lehman, L., Rothman, M., Dugger, D., Hefter, J. Materials Research Society	12 Conference Proceedings Observation of Vortices and Columnar Defects by 1-MV Lorentz Microscopy I Kasai, H., Kamimura, O., Matsuda, T., Harada, K., Tonomura, A., Okayasu, S., Sasase, M., Nakayama, Y., Shimoyama, J., … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12