STUDY OF DOSE AND DOSE RATE IN THE IMPLANTATION OF NITROGEN ISOTOPES INTO Si(100)

STUDY OF DOSE AND DOSE RATE IN THE IMPLANTATION OF NITROGEN ISOTOPES INTO Si(100)

Author(s):

Publication title:

Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

53

Pub. Year:

1985

Page(from):

281

Page(to):

288

Pages:

8

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837180 [0931837189]

Language:

English

Call no.:

M23500/53

Type:

Conference Proceedings

Details

TDL ID:	ZA00015539
Series ID:	PA00000011
Conf. info. (Name):	Symposium on semiconductor-on-insulator and thin film transistor technology
Conf. info. (Number):	1985
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1985.12.03-1985.12.06

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