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EFFECT OF ANNEALING ON THE STRUCTURE OF BURIED SiO2 LAYERS FORMED BY ELEVATED TEMPERATURE HIGH DOSE OXYGEN IMPLANTATION

Author(s):
Publication title:
Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
53
Pub. date:
1985
Page(from):
257
Page(to):
262
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837180 [0931837189]
Language:
English
Call no.:
M23500/53
Type:
Conference Proceedings

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