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FORMATION OP BURIED Si02 BY HIGH DOSE IMPLANTATION OF OXYGEN AT RODM AND LIQUID NITROGEN TEMPERATURES

Author(s):
Publication title:
Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
53
Pub. date:
1985
Page(from):
233
Page(to):
238
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837180 [0931837189]
Language:
English
Call no.:
M23500/53
Type:
Conference Proceedings

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