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EPITAXIAL REGROWTH OF a-GaAs/(100) SILICON BY EXCIMER LASER ANNEALING AT 248 nm

Author(s):
Publication title:
Semiconductor-on-insulator and thin film transistor technology : symposium held December 3-6, 1985, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
53
Pub. Year:
1985
Page(from):
187
Page(to):
192
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837180 [0931837189]
Language:
English
Call no.:
M23500/53
Type:
Conference Proceedings

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