CHARACTERIZATION OF DOPE Si-TiSi2 BILAYERS FORMED BY ION BEAM MXING AND RAPID THERMAL ANNEALING
- Author(s):
- Publication title:
- Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 45
- Pub. Year:
- 1985
- Page(from):
- 153
- Page(to):
- 158
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837104 [0931837103]
- Language:
- English
- Call no.:
- M23500/45
- Type:
- Conference Proceedings
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