Blank Cover Image

THE FORMATION OF AMORPHOUS SILICON BY LIGHT ION DAMAGE

Author(s):
Publication title:
Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
45
Pub. Year:
1985
Page(from):
65
Page(to):
70
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837104 [0931837103]
Language:
English
Call no.:
M23500/45
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings AMORPHIZATION OF SILICON BY BORON ION IMPLANTATION

Shih, Y., Washburn, J., Gronsky, R., Weber, E.R.

Materials Research Society
7 Conference Proceedings THIN FILM Ag/YBCO MULTISTRUCTURES FOR METAL CONTACT APPLICATIONS

Powers, M., Gronsky, R., Washburn, J.

Materials Research Society
2 Conference Proceedings OBSERVATION OF STOICHIOMETRY CHANGES BENEATH METAL CONTACTS 0N GaAs.

LILIENTAL-WEBER,Z., WEBER,E.R., NEWMAN,N., SPICER,W.E., GRONSKY,R., WASHBURN,J.

Trans Tech Publications
8 Conference Proceedings High Resolution Study of the Relationship Between Misfit Accommodation and Growth of Cu2-xS in CdS

Sands, T., Washburn, J., Gronsky, R.

North-Holland
3 Conference Proceedings THE STRUCTURE AND ELECTRICAL PROPERTIES OF Au CONTACTS TO GaAs

Liliental-Weber, Z., Newman, N., Spicer, W.E., Gronsky, P., Washburn, J., Weber, E.R.

Materials Research Society
9 Conference Proceedings A MODEL OF AMORPHOUS SILICON LAYER REGROWTH

Ling, P., Washburn, J.

Materials Research Society
4 Conference Proceedings Formation and effects of secondary defects in ion implanted silicon

Washburn, Jack

North Holland
10 Conference Proceedings Nanotubes and pinholes in GaN and their formation mechanism

Liliental-Weber,Z., Chen,Y., Ruminov,S., Washburn,J.

Trans Tech Publications
5 Conference Proceedings THE STRUCTURE OF A1/GaAs INTERFACES

Liliental-Weber, Zuzanna, Nelson, C., Gronsky, R., Washburn, J., Ludeke, R.

Materials Research Society
11 Conference Proceedings EPITAXIAL PHASE FORMATION OF FeSi2 IN AN Fe-IMPLANTED Si BY ION IRRADIATION AND RAPID THERMAL ANNEALING

Lin, X.W., Behar, M., Desimoni, J., Bernas, H., Swider, W., Liliental-Weber, Z., Washburn, J.

Materials Research Society
6 Conference Proceedings PHASE FORMATION SEQUENCE IN THE Pd-GaAs SYSTEM

Sands, T., Keramidas, V.G., Yu, A.J., Yu, K.M., Gronsky, R., Washburn, J.

Materials Research Society
12 Conference Proceedings Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer

Ruvimov, S., Liliental-Weber, Z., Washburn, J., Kim, Y., Sudhir, G. S., Krueger, J., Weber, E. R.

MRS-Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12