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EFFECT OF PREAMORPHIZATION DEPTH ON CHANNELING TAILS IN B+ AND As+ IMPLANTED SILICON

Author(s):
Suni, I.
Ronkainen, H.
Eranen,S.
Murto, T.
Krontiras, Ch.
Finetti, M.
1 more
Publication title:
Ion beam processes in advanced electronic materials and device technology : symposium held April 15-18, 1985, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
45
Pub. Year:
1985
Page(from):
39
Page(to):
44
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837104 [0931837103]
Language:
English
Call no.:
M23500/45
Type:
Conference Proceedings

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