HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON

HIGH RESOLUTION Z-CONTRAST IMAGING AND LATTICE LOCATION ANALYSIS OF DOPANTS IN ION-IMPLANTED SILICON

Author(s):

Publication title:

Advanced photon and particle techniques for the characterization of defects in solids : symposium held November 27-29, 1984, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

41

Pub. Year:

1985

Page(from):

287

Page(to):

294

Pages:

8

Pub. info.:

Pittsburgh: Materials Research Society

ISSN:

02729172

ISBN:

9780931837067 [0931837065]

Language:

English

Call no.:

M23500/41

Type:

Conference Proceedings

Details

TDL ID:	ZA00015532
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced photon and particle techniques for the characterization of defects in solids
Conf. info. (Number):	1984
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1984.11.29-1984.11.30

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