ABSOLUTE PHOTOIONIZATION CROSS SECTIONS OF THE ACCEPTOR STATE LEVEL OF CHROMIUM IN INDIUM PHOSPHIDE
- Author(s):
- Publication title:
- Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 46
- Pub. Year:
- 1985
- Page(from):
- 371
- Page(to):
- 376
- Pages:
- 6
- Pub. info.:
- Pittsburgh, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9780931837111 [0931837111]
- Language:
- English
- Call no.:
- M23500/46
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
SPIE - The International Society for Optical Engineering |
Trans Tech Publications |
American Society of Mechanical Engineers |
4
Conference Proceedings
A COMPARATIVE STUDY OF DIFFERENT RAPID ANNEALING TECHNIQUES ON ELECTRICALLY ACTIVE DEFECTS IN UNIMPLANTED GALLIUM ARSENIDE
Materials Research Society |
Materials Research Society |
Trans Tech Publications |
11
Conference Proceedings
Determination of the absolute two-photon absorption cross section of tryptophan
SPIE-The International Society for Optical Engineering |
D. Reidel Publishing Company |
12
Conference Proceedings
RELAXATION DEFECT CHARACTERIZATION OF RTCVD Si1-XGeX/Si HETEROSTRUCTURES BY ELECTRICAL AND OPTICAL TECHNIQUES
Materials Research Society |