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THE EFFECT OF UNIAXIAL STRESS ON THE INFRARED ABSORPTION BANDS DUE TO THE OXYGEN DONOR IN SILICON

Author(s):
Publication title:
Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
46
Pub. Year:
1985
Page(from):
257
Page(to):
262
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837111 [0931837111]
Language:
English
Call no.:
M23500/46
Type:
Conference Proceedings

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