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MECHANISM OF DRY ETCHING OF SILICON DIOXIDE: A CASE OF DIRECT REACTIVE ION ETCHING

Author(s):
Publication title:
Plasma synthesis and etching of electronic materials : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
38
Pub. date:
1985
Page(from):
157
Page(to):
162
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837036 [0931837030]
Language:
English
Call no.:
M23500/38
Type:
Conference Proceedings

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