THE EFFECT OF DOPING ON THE INTERFACE BETWEEN GaAs AND AlGaAs

THE EFFECT OF DOPING ON THE INTERFACE BETWEEN GaAs AND AlGaAs

Author(s):

Schaff, W. J.

Publication title:

Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

37

Pub. Year:

1985

Page(from):

15

Page(to):

22

Pages:

8

Pub. info.:

Pittsburgh: Materials Research Society

ISSN:

02729172

ISBN:

9780931837029 [0931837022]

Language:

English

Call no.:

M23500/37

Type:

Conference Proceedings

Details

TDL ID:	ZA00015523
Series ID:	PA00000011
Conf. info. (Name):	Symposium on layered structures, epitaxy, and interfaces
Conf. info. (Number):	1984
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1984.11.27-1984.11.30

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