TEMPERATURE RAMPING FOR NUCLEATION OF OXYGEN PRECIPITATES IN SILICON

TEMPERATURE RAMPING FOR NUCLEATION OF OXYGEN PRECIPITATES IN SILICON

Author(s):

Publication title:

Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

36

Pub. Year:

1985

Page(from):

275

Page(to):

280

Pages:

6

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837012 [0931837014]

Language:

English

Call no.:

M23500/36

Type:

Conference Proceedings

Details

TDL ID:	ZA00015522
Series ID:	PA00000011
Conf. info. (Name):	Symposium on impurity diffusion and gettering in silicon
Conf. info. (Number):	1984
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1984.11.26-1984.11.30

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