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EFFECT OF DOPANT CONCENTRATION ON THE GROWTH OF OXYGEN PRECIPITATES IN SILICON

Author(s):
Publication title:
Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
36
Pub. Year:
1985
Page(from):
263
Page(to):
268
Pages:
6
Pub. info.:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9780931837012 [0931837014]
Language:
English
Call no.:
M23500/36
Type:
Conference Proceedings

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