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N-CHANNEL AND P-CHANNEL LPCVD POLYSILICON MOSFET’S AND EFFECTS OF GRAIN BOUNDARY PASSIVATION

Author(s):
Shichijo, H.
Malhi, S. D. S.
Chatterjee, P. K.
Shah, A. H.
Pollack, G. P.
Richardson, W. H.
Shah, R. R.
Douglas, M. A.
Lam, H. W.
4 more
Publication title:
Comparison of thin film transistor and SOI technologies : symposium held February 1984 in Albuquerque, New Mexico, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
33
Pub. Year:
1984
Page(from):
193
Page(to):
198
Pages:
6
Pub. info.:
New York: North Holland
ISSN:
02729172
ISBN:
9780444008992 [0444008993]
Language:
English
Call no.:
M23500/33
Type:
Conference Proceedings

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