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Dopant. Site Location by Electron Channeling in Ion Implabted Silicon

Author(s):
Publication title:
Electron microscopy of materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
31
Pub. Year:
1984
Page(from):
97
Page(to):
104
Pages:
8
Pub. info.:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444008978 [0444008977]
Language:
English
Call no.:
M23500/31
Type:
Conference Proceedings

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