PHYSICAL PROPERTIES OF TWO METASTABLE STATES OF AMORPHOUS SILICON

PHYSICAL PROPERTIES OF TWO METASTABLE STATES OF AMORPHOUS SILICON

Author(s):

Publication title:

Ion implantation and ion beam processing of materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

27

Pub. Year:

1984

Page(from):

217

Page(to):

222

Pages:

6

Pub. info.:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444008695 [0444008691]

Language:

English

Call no.:

M23500/27

Type:

Conference Proceedings

Details

TDL ID:	ZA00015511
Series ID:	PA00000011
Conf. info. (Name):	Symposium on ion implantation and ion beam processing of materials
Conf. info. (Number):	1983
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1983.11.14-1983.11.17

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