Introduction of electrical defects in p-type silicon due to electron beam and rf sputtering metallizatiori processes

Introduction of electrical defects in p-type silicon due to electron beam and rf sputtering metallizatiori processes

Author(s):

Publication title:

Thin films and interfaces II : symposium held November 1983, in Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

25

Pub. Year:

1984

Page(from):

619

Page(to):

624

Pages:

6

Pub. info.:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444009050 [0444009051]

Language:

English

Call no.:

M23500/25

Type:

Conference Proceedings

Details

TDL ID:	ZA00015509
Series ID:	PA00000011
Conf. info. (Name):	Materials Research Society meeting ; Symposium on thin films and interfaces
Conf. info. (Number):	1983 ; 2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1983.11.14-1983.11.18

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