*THE OCCURRENCE OF DEFECTS IN SILICON CARBIDES AS A RESULT OF PROCESSING MODE AND APPLIED STRESS

*THE OCCURRENCE OF DEFECTS IN SILICON CARBIDES AS A RESULT OF PROCESSING MODE AND APPLIED STRESS

Author(s):

Publication title:

Defect properties and processing of high-technology nonmetallic materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

24

Pub. Year:

1984

Page(from):

351

Page(to):

364

Pages:

14

Pub. info.:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444009043 [0444009043]

Language:

English

Call no.:

M23500/24

Type:

Conference Proceedings

Details

TDL ID:	ZA00015508
Series ID:	PA00000011
Conf. info. (Name):	Materials Research Society meeting ; Symposium on defect properties and processing of high-technology nonmetallic materials
Conf. info. (Number):	1983
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1983.11.14-1983.11.17

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