Ion implantation technique for simultaneous formation of a shallow silicon p-n juction and a shallow silicide-silicon ohmic contact

Ion implantation technique for simultaneous formation of a shallow silicon p-n juction and a shallow silicide-silicon ohmic contact

Author(s):

Publication title:

Interfaces and contacts : symposium held November 1982 in Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

18

Pub. Year:

1983

Page(from):

385

Page(to):

392

Pages:

8

Pub. info.:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444008206 [0444008209]

Language:

English

Call no.:

M23500/18

Type:

Conference Proceedings

Details

TDL ID:	ZA00015501
Series ID:	PA00000011
Conf. info. (Name):	Symposium on interfaces and contacts
Conf. info. (Number):	1982
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1982.11.01-1982.11.04

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