THE STUDY OF DAMAGE PROFILE OF THE ION-IMPLANTED LAYER ON SILICON BY SPECTROSCOPIC ELLIPSOMETRY

THE STUDY OF DAMAGE PROFILE OF THE ION-IMPLANTED LAYER ON SILICON BY SPECTROSCOPIC ELLIPSOMETRY

Author(s):

Luo, J.
McMarr, P. J
Vedam,K. ( The Pennsylvania State University, University Park, PA )

Publication title:

Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

14

Pub. Year:

1983

Page(from):

529

Page(to):

534

Pages:

6

Pub. info.:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444008121 [0444008128]

Language:

English

Call no.:

M23500/14

Type:

Conference Proceedings

Details

TDL ID:	ZA00015498
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects in semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1982.11.00

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