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THE GROWTH OF EPITAXIAL NiSi2 SINGLE CRYSTALS ON SILICON BY THE USE OF TEMPLATE LAYERS

Author(s):
Publication title:
Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
14
Pub. Year:
1983
Page(from):
435
Page(to):
440
Pages:
6
Pub. info.:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444008121 [0444008128]
Language:
English
Call no.:
M23500/14
Type:
Conference Proceedings

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