ELECTRONIC PROPERTIES OF GRAIN BOUNDARIES IN GaAs: A STUDY OF ORIENTED BICRYSTALS PREPARED BY EPITAXIAL LATERAL OVERGROWTH

ELECTRONIC PROPERTIES OF GRAIN BOUNDARIES IN GaAs: A STUDY OF ORIENTED BICRYSTALS PREPARED BY EPITAXIAL LATERAL OVERGROWTH

Author(s):

Salerno, J. P.
McClelland, R. W>
Mavroides, J. G.,
Fan, J. C. C. ( Lincoln Laboratory, MIT, Lexington, MA; )
Witt, A. F. ( Department of Materials Science and Engineering, MIT, Cambridge, MA )

Publication title:

Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

14

Pub. Year:

1983

Page(from):

375

Page(to):

382

Pages:

8

Pub. info.:

New York: North-Holland

ISSN:

02729172

ISBN:

9780444008121 [0444008128]

Language:

English

Call no.:

M23500/14

Type:

Conference Proceedings

Details

TDL ID:	ZA00015498
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defects in semiconductors
Conf. info. (Number):	2nd
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1982.11.00

Similar Items:

1 Conference Proceedings Preparation of oriented GaAs bicrystal layers by vapor-phase epitaxy using lateral overgrowth Salerno, Jack P., McClelland, R.W., Vohl, P., Fan, John C.C., Macropoulos, W., Bozler, C.O., Witt, A.F. North-Holland	7 Conference Proceedings Synchrotron X-ray topography studies of epitaxial lateral overgrowth of GaN on sapphire McNally, P. J., Tuomi, T., Rantamaki, R., Jacobs, K., Considine, L., O'Hare, M., Lowney, D., Danilewsky, A. N. MRS-Materials Research Society
2 Conference Proceedings Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth Wraback, M., Shen, H., Eiting, C. J., Carrano, J. C., Dupuis, R. D. MRS-Materials Research Society	8 Conference Proceedings Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates Yu, Z., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., Jr., Schetzina, J. F., Haberern, K. … MRS - Materials Research Society
3 Conference Proceedings THE STUDY OF SEAM LINE DEFECTS IN SILICON-ON-OXIDE BY MERGED EPITAXIAL LATERAL OVERGROWTH Shih, Yangchin, Lou, J. C., Oldham, W. G. MRS - Materials Research Society	9 Conference Proceedings Epitaxial lateral overgrowth of GaN by HVPE and MOVPE Zhang, R., Gu, S.L., Lu, D.Q., Shen, B., Shi, Y., Zhang, L., Kuech, T.F., Boleslawski, M.P., Kuan, T.S., Zheng, Y. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Lateral epitaxial overgrowth for defect-free GaN substrates Freitas,J.A.,Jr., Saparin,G.V., Nam,O-H., Zheleva,T.S., Davis,R.F. SPIE - The International Society for Optical Engineering	10 Conference Proceedings SIX-INCH DIAMETER GaAs ON Si WAFERS Salerno, Jack P., Hill, D.S., Lee, J.W., McCullough, R.E., Fan, John C.C. Materials Research Society
5 Conference Proceedings Dot Pattem Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy. Liu, W.Y., Tsay, J.D., Guo, Y.D., Liu, H.P., Yeh, R.C. Electrochemical Society	11 Conference Proceedings Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates Suryanarayanan, Ganesan, Khandekar, Anish A., Hawkins, Brian E., Kuech, Thomas F., Babcock, Susan E. Materials Research Society
6 Conference Proceedings *EPITAXY OF GaAs ON Si : MBE AND OMCVD Lee, J. W., Salerno, J. P., Gale, R. P., Fan, J. C. C. Materials Research Society	12 Conference Proceedings EPITAXIAL GROWTH OF GaAs ON F-INCH DIAMETER SILICON SUB-STRATES BY OMCVD Salerno, J. P, Lee, J. W., McCullough, R. E., Gale, R. P. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12