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THERMAL DONOR FORMATION BY THE AGGLOMERATION OF OXYGEN IN SILICON

Author(s):
  • Gosele, U. ( Max-Planck Institute of Metal Physics, Stuttgart, West Germany; )
  • Tan,. T. Y. ( IBM, Thomas J. Watson Research Center, Yorktown Heights., NY )
Publication title:
Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
14
Pub. date:
1983
Page(from):
153
Page(to):
158
Pages:
6
Pub. info.:
New York: North-Holland
ISSN:
02729172
ISBN:
9780444008121 [0444008128]
Language:
English
Call no.:
M23500/14
Type:
Conference Proceedings

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