*THE NATURE OF POIND DEFECTS AND THEIR INFLUENCE ON DIFFUSION PROCESSES IN SILICON AT HIGH TEMPERATURE,
- Author(s):
- Gosele, U.
- Publication title:
- Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 14
- Pub. Year:
- 1983
- Page(from):
- 45
- Page(to):
- 60
- Pages:
- 16
- Pub. info.:
- New York: North-Holland
- ISSN:
- 02729172
- ISBN:
- 9780444008121 [0444008128]
- Language:
- English
- Call no.:
- M23500/14
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
Materials Research Society |
Kluwer Academic Publishers |
Materials Research Society |
MRS - Materials Research Society |
9
Conference Proceedings
PRESENT UNDERSTANDING OF PONT DIEECT PARAMETERS AND DIFFUSION IN SILICON: AN OVERVIEW
Electrochemical Society |
4
Conference Proceedings
Investigation of Diffusion Process Induced Defects in High Purity Silicon Crystals
Electrochemical Society |
North-Holland |
Trans Tech Publications |
MRS - Materials Research Society |
6
Conference Proceedings
INTERACTION OF POINT AND EXTENDED DEFECTS IN SILICON: THEIR INFLUENCE ON THE POLYCRYSTALLINE SILICON SUBSTRATE QUALITY FOR HIGH EFFICIENCY SOLAR CELLS
Electrochemical Society |
Trans Tech Publications |