Behavior of Graded Channel SOI Gate-All-Around NMOSFET Devices at High Temperatures

Behavior of Graded Channel SOI Gate-All-Around NMOSFET Devices at High Temperatures

Author(s):

Publication title:

Microelectronics technology and devices : SBMICRO 2004 : proceedings of the nineteenth international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2004-03

Pub. Year:

2004

Page(from):

9

Page(to):

14

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774161 [1566774160]

Language:

English

Call no.:

E23400/200403

Type:

Conference Proceedings

Details

TDL ID:	ZA00015413
Series ID:	PA00000028
Conf. info. (Name):	SBMICRO ; Symposium on Integrated Circuits and System Design
Conf. info. (Number):	19th (2004) ; 17th
Conf. info. (Venue):	Porto de Galinhas, Brazil
Conf. info. (Date):	2004.09.07-2004.09.11

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