Evaluation of ultra-thin double gate MOSFETs for the 45 nm technology node

Evaluation of ultra-thin double gate MOSFETs for the 45 nm technology node

Author(s):

Publication title:

Silicon-on-insulator technology and devices XII : proceedings of the international symposium

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2005-03

Pub. Year:

2005

Page(from):

45

Page(to):

50

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774611 [1566774616]

Language:

English

Call no.:

E23400/200503

Type:

Conference Proceedings

Details

TDL ID:	ZA00015411
Series ID:	PA00000028
Conf. info. (Name):	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
Conf. info. (Number):	12th ; 207th
Conf. info. (Venue):	Quebec City, Canada
Conf. info. (Date):	2005.05.15-2005.05.20

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