Performance and Reliability of InGaN-GaN Light-Emitting Diodes with Mirror Wafer Bonding Technology

Performance and Reliability of InGaN-GaN Light-Emitting Diodes with Mirror Wafer Bonding Technology

Author(s):

Publication title:

State-of-the-art program on compound semiconductors (SOTAPOCS XLII) and processes at the compound-semiconductor/solution interface : proceedings of the international symposia

Title of ser.:

Electrochemical Society Proceedings Series

Ser. no.:

2005-04

Pub. Year:

2005

Page(from):

278

Page(to):

288

Pages:

11

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774628 [1566774624]

Language:

English

Call no.:

E23400/200504

Type:

Conference Proceedings

Details

TDL ID:	ZA00015409
Series ID:	PA00000028
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; International Symposium on Processes at the Compound-Semiconductor/Solution Interface ; Meeting of the Electrochemical Society
Conf. info. (Number):	42nd ; 2005 ; 207th
Conf. info. (Venue):	Quebec City, Canada
Conf. info. (Date):	2005.05.15-2005.05.20

Similar Items:

1 Conference Proceedings Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes Horng,R.H., Wuu,D.S., Peng,W.C., Huang,M.F., Liu,P.H., Seieh,C.H., Lin,K.C. SPIE - The International Society for Optical Engineering	7 Conference Proceedings Highly efficient InGaN/GaN LEDs with double-sided textured surfaces and omni-directional mirror structure D.-S. Wuu, S.-H. Huang, R.-H. Horng, C.-Y. Hsieh, K.-W. Yen Society of Photo-optical Instrumentation Engineers
2 Conference Proceedings AlGaInP Light-Emitting Diodes with Metal Substrates Fabricated by Wafer Bonding Peng, W.C., Wu, Y.S. Electrochemical Society	8 Conference Proceedings Improved Luminance Intensity of InGaN-GaN Light-Emitting Diode by Roughening both p-GaN and Undoped-GaN Surfaces and Applying a Mirror to the Sapphire Substrate … Y. S. Wu, C. Liao Electrochemical Society
3 Conference Proceedings GaN-Based Light-Emitting Diodes for Vertical Current Injection by Laser Lift-off and Wafer Bonding Techniques Horng, R.-H., Pan, K.-F., Lee, C.-E., Hung, S.-H., Lin, W.-Y., Su, Y.-Y., Yang, C.-C., Wuu, D.-S. Electrochemical Society	9 Conference Proceedings Enhanced Thermal Dissipation and Light Output of GaN/Sapphire Light-Emitting Diode by Direct Cu Electroplating C. Chiang, R. Horng, D. Wuu, H. Hsiao, C. Hsieh Electrochemical Society
4 Conference Proceedings Enhance the Luminance Intensity of InGaN-GaN Light-Emitting Diode by Roughening both the p-GaN Surface and the Undoped-GaN Surface Using Wafer Bonding Methods Y. Wu, W. Chih Electrochemical Society	10 Conference Proceedings Life Testing and Reliability Behavior of GaN/InGaN/AlGaN Light-Emitting Diodes Osinski, M., Barton, D. L., Helms, C. J., Berg, N. H., Seager, C. H. MRS - Materials Research Society
5 Conference Proceedings Stability Effects of Reflective Mirror on GaN LED/Mirror/Si Via Wafer Bonding and Laser Lift-Off Techniques R. Horng, S. Huang, D. Wuu, C. Lin, H. Liu Electrochemical Society	11 Conference Proceedings InGaAlP and InGaN Light-emitting diodes:high-power performance and reliability Eliashevich,I., Debray,J.-P.M., Tran,C.A., Venugopalan,H., Karlicek,R.F.,Jr. SPIE - The International Society for Optical Engineering
6 Conference Proceedings Novel processing for improving optical property of InGaN/GaN MQW light-emitting diode Hwang,C.H., Hsieh,K.-Y., Huang,H.S., Tu,L.-W. SPIE - The International Society for Optical Engineering	12 Conference Proceedings The effect of junction temperature on the optoelectrical properties of green InGaN/GaN multiple quantum well light-emitting diodes W. Chen, D. Kuo, C. Hung, C. Ke, H. Shen, J. Wang, Y. Wu, T. Nee SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12