CHEMICAL MECHANICAL POLISHING OF COPPER AND TANTALUM BARRIER: STUDIES ON SLURRY CHEMISTRY FOR OPTIMUM SELECTIVITY
- Author(s):
- Publication title:
- Semiconductor technology (ISTC 2006) : proceedings of the 5th International Conference on Semiconductor Technology
- Title of ser.:
- Electrochemical Society Proceedings Series
- Ser. no.:
- 2006-03
- Pub. Year:
- 2006
- Page(from):
- 560
- Page(to):
- 571
- Pages:
- 12
- Pub. info.:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774376 [1566774373]
- Language:
- English
- Call no.:
- E23400/200603
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
7
Conference Proceedings
Electrochemical Testing of Tantalum and Copper in Chemical Mechanical Polishing Slurries
Electrochemical Society |
2
Conference Proceedings
The Application of Chemical Mechanical Polishing for Nickel Used in MEMS Devices
Materials Research Society |
8
Conference Proceedings
Effect of Organic Amine in Colloidal Silica Slurry on Polishing-rate Selectivity of Copper to Tantalum-nitride Film in Copper Chemical Mechanical Planarization
Electrochemical Society |
3
Conference Proceedings
Selectivity Studies on Tantalum Barrier Layer for Copper Chemical Mechanical Planarization
Electrochemical Society |
Electrochemical Society |
4
Conference Proceedings
Effect of Hydrogen Peroxide on Oxidation of Copper in CMP Slurries Containing Glycine and Cu Sulfate
Materials Research Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |