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IMPROVED HIGH BREAKDOWN VOLTAGE IN ALGAAS/GAAS HIGH ELECTRON MOBILITY TRANSISTOR BY NATIVE GATE OXIDES

Author(s):
Publication title:
Semiconductor technology (ISTC 2006) : proceedings of the 5th International Conference on Semiconductor Technology
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2006-03
Pub. date:
2006
Page(from):
181
Page(to):
186
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774376 [1566774373]
Language:
English
Call no.:
E23400/200603
Type:
Conference Proceedings

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