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(16.4) 4:25 - 4:45 PM - In-situ Doped Poly-SiGe LPCVD Process using BCI3 for Post-CMOS Integration of MEMS Devices

Author(s):
Publication title:
SiGe: materials, processing, and devices : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-07
Pub. Year:
2004
Page(from):
1021
Page(to):
1032
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
Language:
English
Call no.:
E23400/200407
Type:
Conference Proceedings

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