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(15.4) 2:10 -2:30 PM - Effect of Thermal Processing on Dopant Layer Abruptness in Si1_xGex Heterostructures

Author(s):
L Rowell, N.
Houghton, D. C.
Berbezier, I
Ronda, A.
Webb, D.
Ward, M. (National Research Council, AIXTRON. CNRS, ATMI)
1 more
Publication title:
SiGe: materials, processing, and devices : proceedings of the First international symposium
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
2004-07
Pub. Year:
2004
Page(from):
973
Page(to):
982
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774208 [1566774209]
Language:
English
Call no.:
E23400/200407
Type:
Conference Proceedings

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